february 2012 FDP5N50NZU / fdpf5n50nzu n-channel mosfet ?2012 fairchild semiconductor corporation FDP5N50NZU / fdpf5n50nzu rev. c0 www.fairchildsemi.com 1 unifet-ii tm mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDP5N50NZU fdpf5n50nzu units v dss drain to source voltage 500 v v gss gate to source voltage 25 v i d drain current -continuous (t c = 25 o c) 3.9 3.9* a -continuous (t c = 100 o c) 2.3 2.3* i dm drain current - pulsed (note 1) 15 15* a e as single pulsed avalanche energy (note 2) 135 mj i ar avalanche current ( note 1) 3.9 a e ar repetitive avalanche energy (note 1) 7.8 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 78 30 w - derate above 25 o c 0.62 0.24 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP5N50NZU fdpf5n50nzu units r jc thermal resistance, junction to case 1.6 4.1 o c/w r cs thermal resistance, case to heat sink typ. 0.5 - r ja thermal resistance, junction to ambient 62.5 62.5 FDP5N50NZU / fdpf5n50nzu n-channel mosfet 500v, 3.9a, 2.0 features ?r ds(on) = 1.7 ( typ.)@ v gs = 10v, i d = 1.95a ? low gate charge ( typ. 9nc) ?low c rss ( typ. 4pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? esd imoroved capability ?rohs compliant description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- cient switching mode power supplies and active power factor correction. g s d g s d to-220 fdp series g d s to-220f fdpf series (potted) g s d *drain current limited by maximum junction temperature
FDP5N50NZU / fdpf5n50nzu n-channel mosfet FDP5N50NZU / fdpf5n50nzu rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP5N50NZU FDP5N50NZU to-220 - - 50 fdpf5n50nzu fdpf5n50nzu to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 500 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.5-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 25 a v ds = 400v, v gs = 0v,t c = 125 o c- - 250 i gss gate to body leakage current v gs = 25v, v ds = 0v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 1.95a - 1.7 2.0 g fs forward transconductance v ds = 20v, i d = 1.95a (note 4) -4.2-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 365 485 pf c oss output capacitance - 50 65 pf c rss reverse transfer capacitance - 4 8 pf q g(tot) total gate charge at 10v v ds = 400v i d = 3.9a v gs = 10v (note 4) - 9 12 nc q gs gate to source gate charge - 2 - nc q gd gate to drain ?miller? charge - 4 - nc t d(on) turn-on delay time v dd = 250v, i d = 3.9a v gs = 10v, r gen = 25 (note 4) -1235ns t r turn-on rise time - 19 50 ns t d(off) turn-off delay time - 31 70 ns t f turn-off fall time - 22 55 ns i s maximum continuous drain to source diode forward current - - 3.9 a i sm maximum pulsed drain to source diode forward current - - 15 a v sd drain to source diode forward voltage v gs = 0v, i sd = 3.9a - - 1.6 v t rr reverse recovery time v gs = 0v, i sd = 3.9a di f /dt = 100a/ s (note 4) -45-ns q rr reverse recovery charge - 33 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 18mh, i as = 3.9a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 3.9a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDP5N50NZU / fdpf5n50nzu n-channel mosfet FDP5N50NZU / fdpf5n50nzu rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.03 0.1 1 10 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d , drain current[a] v ds , drain-source voltage[v] 25 345678 0.1 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.4 0.8 1.2 1.6 1 10 50 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0246810 1.2 1.6 2.0 2.4 2.8 3.2 3.6 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0246810 0 2 4 6 8 10 *note: i d = 3.9a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 30 0 200 400 600 800 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDP5N50NZU / fdpf5n50nzu n-channel mosfet FDP5N50NZU / fdpf5n50nzu rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature vs. case temperature-fdpf5n50nzu figure 9. maximum drain current figure 10. transient thermal response curve-fdpf5n50nzu -75 -50 0 50 100 150 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms 1 ms dc 10 ms 100 s operation in this area is limited by r ds(on) ? notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 4.1 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
FDP5N50NZU / fdpf5n50nzu n-channel mosfet FDP5N50NZU / fdpf5n50nzu rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP5N50NZU / fdpf5n50nzu n-channel mosfet FDP5N50NZU / fdpf5n50nzu rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP5N50NZU / fdpf5n50nzu n-channel mosfet FDP5N50NZU / fdpf5n50nzu rev. c0 www.fairchildsemi.com 7 package dimensions to-220
FDP5N50NZU / fdpf5n50nzu n-channel mosfet FDP5N50NZU / fdpf5n50nzu rev. c0 www.fairchildsemi.com 8 package dimensions dimensions in millimeters to-220f * front/back side isolation voltage : ac 2500v
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